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 TSC5904
Low Vcesat NPN Transistor
SOT-23
Pin Definition: 1. Base 2. Emitter 3. Collector
PRODUCT SUMMARY
BVCBO BVCEO IC VCE(SAT) 80V 60V 3A 0.60V @ IC / IB = 3 / 300mA
Features
High Collector-Emitter BVCEO=60V High Collector Current IC =3A
Ordering Information
Part No.
TSC5904CX RF
Package
SOT-23
Packing
3Kpcs / 7" Reel
Structure
Epitaxial Planar Type NPN Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
Symbol
VCBO VCEO VEBO IC Ptot TJ TSTG
Limit
80 60 5 3 500 +150 - 55 to +150
Unit
V V V A mW o C o C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage
Conditions
IC = 10uA, IE = 0 IC = 1mA, IB = 0 IE = 10uA, IC = 0 VCB = 40V, IE = 0 VEB = 4V, IC = 0 IC = 1A, IB = 100mA IC = 3A, IB = 300mA IC = 1A, IB = 100mA VCE = 2V, IC = 1A VCE = 2V, IC = 50mA VCE = 2V, IC = 1A VCE = 2V, IC = 3A VCE = 2V, IC = 500mA VCE = 5V, IC=-100mA VCB = 10V, f=1MHz VCC= 10V, IC= 500mA, IB1=-IB2=50mA
Symbol
BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) 1 VCE(SAT) 2 VBE(SAT) VBE(ON) hFE 1 hFE 2 hFE 3 hFE 4 fT Cob Ton Toff
Min
80 60 5 -----70 100 80 40 140 ----
Typ
-----0.12 0.43 0.9 0.8 -----45 800
Max
---0.1 0.1 0.3 0.6 1.25 1.0 -300 ---30 ---
Unit
V V V uA uA V V V
DC Current Transfer Ratio
Transition Frequency Output Capacitance Switching Times
MHz pF nS nS
1/4
Version: A08
TSC5904
Low Vcesat NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. Static Characteristics Figure 2. DC Current Gain
Figure 3. VCE(SAT) v.s. VBE(SAT
Figure 4. Power Derating
2/4
Version: A08
TSC5904
Low Vcesat NPN Transistor
SOT-23 Mechanical Drawing
DIM A A1 B C D E F G H I J
SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5 10 5 10
Marking Diagram
CF = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
3/4
Version: A08
TSC5904
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: A08


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